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2020-12-1u2002·u2002The results show that the maximum power (≈ 1000 pW) and lower internal resistance (≈ 0. 3 k Ω) were related to the shortest leg's length (L = 8 μ m) (Fig. 9d). Improving the efficiency of such novel high-power Si-nanowires-based μ TEG, manufactured with CMOS-IC technology, presents an outstanding achievement Tomita et al. (2018).
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